negative resistance

By combining the three terminal negative resistance devices and silicon photo detectors, the author of this paper has proposed and composed a novel category of optoelectronic devices& silicon photo negative resistance device successfully.

将三端负阻器件与硅光电探测器相结合，通过新的构思成功地提出并构成了一类新型光电器件&硅光电负阻器件。

DB has a negative resistance temperature characteristic from room temperature to approximately 1200? F ( 650? C ).

DB型 硅碳棒除在室温至1200? F ( 650? C ) 内存在负阻值.

Influence of Surface Impurity Profiles on Characteristics of Negative Resistance of Transistor

表面杂质浓度分布对晶体管负阻特性的影响

The U-I properties of the samples at room temperature and cryogenic temperature ( 77K) were measured by three-point method, and it was found that there is an effect like negative resistance in such multilayer films.

本文采用三点法测定了常温、低温下的U-I特性，发现常温、低温下纳米量级的硅/氧化硅多层膜具有类似负阻的特性。